Samsung Begins Chip Production Using 3nm Process Technology Best Free Vst With GAA Architecture

▲ The leaders of Samsung Foundry Business and Semiconductor R&D Center are holding up three fingers as a symbol of 3nm celebrating the company’s first ever production of 3nm process with GAA architecture. Samsung Electronics, the world leader in semiconductor technology, today announced that it has started initial production of its 3-nanometer (nm) process node applying Gate-All-Around (GAA) transistor architecture. Multi-Bridge-Channel FET (MBCFET ™ ), Samsung’s GAA technology implemented for the first time ever, defies the performance limitations of FinFET, improving power efficiency by reducing the supply voltage level, while also enhancing performance by increasing drive current capability.